Texture optimization process of ZnO:Al thin films using NH_4Cl aqueous solution for applications as antireflective coating in thin film solar cells

摘要

ZnO:Al thin films varying the thickness from 80 to 110 nm were deposited on polished float zone <100> Si wafers by radio frequency magnetron sputtering at 100℃. To texturize these surfaces with the aim of being used as antireflective coating, a wet etching process based on NH_4Cl was applied. Taking into account that the layer thickness was small, the control of the etch parameters such as etchant concentration and etching time was evaluated as a function of the textured film properties. An appropriate control of the etching rate to adjust the final thickness to the 80 nm required for the application was realized. Using NH_4Cl concentrations of 10 wt.% and short times of up to 25 s, an increase of the film roughness up to a factor of 5.6 of the as-deposited films was achieved. These optimized textured films showed weighted reflectance values below 15% and considerable better electrical properties than the as-deposited 80 nm-thick ZnO:Al films.