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Characterization of a based h-BN thin film elaborated from the reaction between a flowing nitrogen plasma and B_2H_6

机译:由流动的氮等离子体与B_2H_6之间的反应精心制备的h-BN基薄膜的表征

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摘要

The reactivity of a nitrogen flowing microwave plasma is used to dissociate diborane in order to deposit a thin film of hexagonal boron nitride on a silicon substrate. Two reactive zones are tested: the far post-discharge and the secondary ionized zone. FTIR, Raman and XPS studies show unambiguously the formation of h-BN.
机译:氮气流动的微波等离子体的反应性用于解离乙硼烷,以便在硅基板上沉积六方氮化硼薄膜。测试了两个反应区:远后放电区和次级电离区。 FTIR,拉曼和XPS研究清楚地表明了h-BN的形成。

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