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机译:Ingaas MHEMT技术的宽带300 GHz功率放大器MMIC
Fraunhofer Inst Appl Solid State Phys IAF D-79108 Freiburg Germany;
Fraunhofer Inst Appl Solid State Phys IAF D-79108 Freiburg Germany;
Fraunhofer Inst Appl Solid State Phys IAF D-79108 Freiburg Germany;
Fraunhofer Inst Appl Solid State Phys IAF D-79108 Freiburg Germany;
Fraunhofer Inst Appl Solid State Phys IAF D-79108 Freiburg Germany;
Karlsruhe Inst Technol KIT Inst Radio Frequency Engn & Elect D-76131 Karlsruhe Germany;
mHEMTs; Indium gallium arsenide; Power generation; Impedance; Broadband communication; Power transmission lines; Logic gates; InGaAs mHEMT; solid-state power amplifier; sub-mm-wave operation;
机译:具有6.7–8.3 dBm输出功率的280–310 GHz InAlAs / InGaAs mHEMT功率放大器MMIC
机译:采用基于0.1μmGaAs的mHEMT技术的80-110 GHz MMIC放大器
机译:使用Nanogate InGaAs / InAlAs HEMT技术的电子带低噪声放大器MMIC
机译:基于50nm InGaAs mHEMT技术的两种具有超低功耗的W波段低噪声放大器MMIC的比较
机译:使用氮化镓HEMT的毫米波宽带功率放大器MMIC的开发。
机译:基于并行放大架构的电磁超声导波宽带线性大功率放大器
机译:采用50 nm栅长mHEmT技术的DC-35 GHz低损耗mmIC开关,适用于超低功耗应用
机译:mmIC放大器技术最先进的技术:功率放大器和低噪声放大器