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The local structure of SO2 and SO3 on Ni(111)

机译:Ni(111)上SO2和SO3的局部结构

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The normal incidence X-ray standing wave (NIXSW) technique, supported by X-ray photoelectron spectroscopy and near-edge X-ray absorption fine structure (NEXAFS), has been used to determine the local adsorption geometry Of SO2 and SO3 on Ni(111). Chemical-state specific NIXSW data for coadsorbed SO3 and S, formed by the disproportionation of adsorbed SO2 after heating from 140 K to 270 K, were obtained using S1s photoemission detection. For adsorbed SO2 at 140 K the new results confirm those of an earlier study [Jackson et al., Surf. Sci. 389 (1997) 223] that the molecule is located above hollow sites with its molecular plane parallel to the surface and the S and O atoms in off-atop sites; corrections to account for the non-dipole effects in the interpretation of the NIXSW monitored by S Is and O Is photoemission, not included in the earlier work, remove the need for any significant adsorption-induced distortion of the SO2 in this structure. SO3, not previously investigated, is found to occupy an off-bridge site with the C-3v axis slightly tilted relative to the surface normal and with one O atom in an off-atop site and the other two O atoms roughly between bridge and hollow sites. The O atoms are approximately 0.87 A closer to the surface than the S atom. This general bonding orientation for SO3 is similar to that found on Cu(111) and Cu(100) both experimentally and theoretically, although the detailed adsorption sites differ. (C) 2005 Elsevier B.V. All rights reserved.
机译:X射线光电子能谱和近边缘X射线吸收精细结构(NEXAFS)支持的垂直入射X射线驻波(NIXSW)技术已用于确定SO2和SO3在Ni( 111)。使用S1s的光发射检测获得了共吸附的SO3和S的化学态特定NIXSW数据,该数据是由140 K至270 K加热后吸附的SO2歧化形成的。对于在140 K下吸附的SO2,新结果证实了早期研究的结果[Jackson等,Surf。科学389(1997)223]:该分子位于中空位点上方,其分子平面平行于表面,S和O原子位于异位位点;更正以解决由S Is和O Is光发射监测的NIXSW的解释中非偶极效应的影响,这在早期工作中并未包括在内,从而消除了此结构中任何明显的由吸附引起的SO2畸变的需求。发现SO3(以前未研究过)占据一个桥外位置,C-3v轴相对于表面法线略微倾斜,一个O原子位于一个非顶位,而另外两个O原子大致位于桥和空心之间网站。 O原子比S原子更接近表面约0.87A。尽管详细的吸附位置不同,但从实验和理论上来说,SO3的这种一般键合取向与Cu(111)和Cu(100)上的相似。 (C)2005 Elsevier B.V.保留所有权利。

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