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Nanowedge island formation on Mo(110)

机译:Nanowe dssan d forma Machion Onmo(110)

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The deposition of ultrathin Fe films on the Mo(110) surface at elevated temperatures results in the formation of distinctive nanowedge islands. The model of island formation presented in this work is based on both experiment and DFT calculations of Fe adatom hopping barriers. Also, a number of classical molecular dynamics simulations were carried out to illustrate fragments of the model. The islands are formed during a transition from a nanostripe morphology at around 2 ML coverage through a Bales-Zangwill type instability. Islands nucleate when the meandering step fronts are sufficiently roughened to produce a substantial overlap between adjacent steps. The islands propagate along the substrate [001] direction due to anisotropic diffusion/capture processes along the island edges. It was found that the substrate steps limit adatom diffusion and provide heterogeneous nucleation sites, resulting in a higher density of islands on a vicinal surface. As the islands can be several layers thick at their thinnest end, we propose that adatoms entering the islands undertake a so-called "vertical climb" along the sides of the island. This is facilitated by the presence of mismatch-induced dislocations that thread to the sides of the islands and produce local maxima of compressive strain. Dislocation lines also trigger initial nucleation on the surface with 2-3 ML Fe coverage. The sides of the nanowedge islands typically form along low-index crystallographic directions but can also form along dislocation lines or the substrate miscut direction.
机译:在高温下,Mo(110)表面超薄铁膜的沉积导致形成独特的纳米楔形岛。在这项工作中提出的岛形成模型是基于实验和铁吸附原子跳跃壁垒的DFT计算。而且,进行了许多经典的分子动力学模拟以说明模型的片段。这些岛是在从纳米条形貌转变为2 ML覆盖范围到Bales-Zangwill型不稳定性的过渡过程中形成的。当曲折台阶的前部足够粗糙以在相邻台阶之间产生实质重叠时,岛形物成核。由于沿着岛边缘的各向异性扩散/捕获过程,岛沿着衬底[001]方向传播。已经发现,基底台阶限制了原子的扩散并提供了异质的成核位点,从而在邻近的表面上形成了更高的岛密度。由于这些岛的最薄端可能有几层厚,因此我们建议进入这些岛的吸附原子沿着岛的侧面进行所谓的“垂直爬升”。错配引起的位错的存在促进了这种错位,这些位错贯穿在岛的侧面并产生局部最大的压缩应变。位错线还触发了表面上的初始成核,覆盖了2-3 ML Fe。纳米楔岛的侧面通常沿低折射率晶体学方向形成,但也可以沿位错线或衬底错切方向形成。

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