The backscattering factor for systems with a non-uniform surface region: Definition and calculations

摘要

It has been recently shown that the backscattering factor (BF) in Auger electron spectroscopy (AES) noticeably depends on the in-depth structure of the surface region. This is a particularly important problem in sputter depth profiling monitored by AES since the signal intensity cannot be described with a single BF value. The BF depends on the removed amount of material and thus varies with sputtering time. In the present work, the definition of the BF is generalized to extend its applicability to systems with an in-depth composition profile. The generalized definition of the BF was applied to the special case of a depth profile, i.e. a buried thin layer. It has been shown that the BF for this case is expressed by the excitation depth distribution function (EXDDF) which is equivalent to the "Phi-Rho-Z" function used in electron probe microanalysis (EPMA). Different algorithms for calculating the BF are discussed. Calculations of the BF for buried layer were performed for the Ag M_4N_(45)N_(45) Auger transition in a thin layer of silver located at different depths in three matrix materials: Si, Cu, and Au. It was found that, indeed, the BF noticeably varies with the depth of the layer in the analyzed volume, although the extent of this variation depends on the matrix material. For Si, the variation is observed for the lowest primary beam energies considered, i.e., 1 and 2 keV. For Cu, a distinct depth dependence of the BF is visible at 10 keV and lower energies, while for Au, the BF varies with depth even at the highest considered energy, i.e. 30 keV.