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Kinetic Monte-Carlo simulation of the homoepitaxial growth of MgO{001} thin films by molecular deposition

机译:分子沉积MgO {001}薄膜同质外延生长的动力学蒙特卡洛模拟

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摘要

A lattice-based kinetic Monte-Carlo (KMC) code has been developed to investigate the MgO{001} crystal growth from deposition of MgO molecules, as a prototypical case of the growth of oxide thin films. The KMC approach has been designed on the basis of an extensive database including all possible diffusion mechanisms. The corresponding activation energies have been computed through first-principles calculations at zero temperature or from Arrhenius plots of the frequencies obtained by molecular dynamics simulations with empirical potentials. Crystal growth occurs layer by layer, as experimentally observed, and the diffusion of admolecules leads to a high capacity of nudeation, which is enhanced by vacancy diffusion. We have characterized the growth through surface roughness, size distribution and density of the islands, and filling ratios of the growing layers. Moreover, we have analysed the influence of each elementary mechanism on the growth. The best quality of the deposited layers is reached for temperatures larger than 700 K and for pressures smaller than 0.1 Torn For these conditions, the simulated surface roughness is fully consistent with available experimental results.
机译:已经开发出基于晶格的动力学蒙特卡洛(KMC)码,以研究由于氧化镁薄膜生长的典型情况而产生的MgO分子沉积引起的MgO {001}晶体生长。 KMC方法是在包含所有可能的扩散机制的广泛数据库的基础上设计的。相应的活化能是通过零温度下的第一性原理计算或通过具有经验势的分子动力学模拟获得的频率的阿伦尼乌斯图计算出来的。如实验观察到的,晶体生长是逐层发生的,并且分子的扩散导致高的裸露能力,其通过空位扩散而增强。我们通过表面粗糙度,岛的尺寸分布和密度以及生长层的填充率来表征生长。此外,我们分析了每个基本机制对增长的影响。当温度大于700 K,压力小于0.1 Torn时,沉积层的质量达到最佳。对于这些条件,模拟的表面粗糙度与可用的实验结果完全一致。

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