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First-principle investigation 3,4-ethylenedioxythiophene molecule adsorption on Cu(110)-(2 x 1)O surface

机译:第一性原理研究3,4-乙撑二氧噻吩分子在Cu(110)-(2 x 1)O表面的吸附

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The adsorption of 3,4-ethylenedioxythiophene (EDOT) on Cu(110)-(2 x 1)O was investigated by first-principles density functional theory (DFT). We found that, at low EDOT coverage, the most favorable adsorbing geometry is the thiophene ring of EDOT parallel to the Cu (1 (1) over bar2) and molecule is upright rather than lying. With the increasing of EDOT coverage, the dimer and tetramer can form by new forming C = C and C-Cu bonds. The dimer and tetramer were neither cis synthesized recently nor traditional anti structure. On the contrary, the EDOT was alternative tilted and formed a zigzag-like molecule arrangement. The binding mechanism of EDOT and substrate was clarified by density of state (DOS) analysis and charge density difference (CDD) calculations. The strong molecule-substrate interaction was confirmed by high adsorption energy for the most stable adsorbing geometry. In addition, the STM images were also simulated by evaluating the contribution of local density of state near fermi energy level. (C) 2017 Elsevier B.V. All rights reserved.
机译:通过第一原理密度泛函理论(DFT)研究了3,4-乙二氧基噻吩(EDOT)在Cu(110)-(2 x 1)O上的吸附。我们发现,在低EDOT覆盖率下,最有利的吸附几何形状是EDOT的噻吩环与bar(bar2上的Cu(1(1))平行)且分子是直立而不是平躺的。随着EDOT覆盖率的增加,二聚体和四聚体可以通过新形成的C = C和C-Cu键形成。二聚体和四聚体既不是顺式合成的,也不是传统的抗结构。相反,EDOT被交替倾斜并形成了锯齿状的分子排列。 EDOT与底物的结合机理通过状态密度(DOS)分析和电荷密度差(CDD)计算得以阐明。高吸附能证实了分子与底物之间的强相互作用,从而获得了最稳定的吸附几何形状。此外,还通过评估费米能级附近状态的局部密度的贡献来模拟STM图像。 (C)2017 Elsevier B.V.保留所有权利。

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