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Enhanced atomic oxygen adsorption on defective nickel surfaces: An ab initio study

机译:缺陷原子镍表面上增强的原子氧吸附:从头算研究

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In this work we have examined the influence of the presence of a monovacancy on the atomic oxygen adsorption process at nickel surfaces of orientation (111), (100), and (110). The presence of such a defect was neglected in earlier studies. And for the first time, we have studied oxygen segregation on a defective (111) surface. The results reveal a varying sensitivity of the oxygen adsorption energy to the state of the surfaces. When compared to the perfect surface, we have registered an energy gain of 0.22 eV in the process of oxygen adsorption on the (111) surface when a vacancy is present on it. However, the energetic gains for the other two surfaces, (100) and (110), are much less than that of the (111) surface: they are of the order of 0.1 eV. Comparing to the perfect surfaces, we have found that charge reconstruction in the neighborhood of the vacancy plays a major role in giving rise to the aforementioned energetic gains. Indeed, we find an increase in the charge density on the nickel atoms surrounding the vacancy, which leads to strengthening of the ionic Ni-O bond if the oxygen is adsorbed in its vicinity. As a means of studying the effect of the presence of the vacancy on the first stages of the growth of an oxide layer, we have looked at the segregation process of oxygen atoms at the three surfaces. Our results show that up to four oxygen atoms can aggregate favorably at the adsorption sites inside and in the vicinity of the monovacancy at the (111) surface. This number is reduced to two oxygen atoms at the (110) surface, and to only one oxygen atom at the (100) surface.
机译:在这项工作中,我们研究了单空位的存在对取向(111),(100)和(110)的镍表面上原子氧吸附过程的影响。这种缺陷的存在在早期的研究中被忽略了。并且这是我们第一次研究有缺陷(111)表面上的氧偏析。结果揭示了氧吸附能对表面状态的变化敏感性。当与理想表面比较时,当在其上存在空位时,在(111)表面上的氧吸附过程中,我们记录到0.22 eV的能量增益。但是,其他两个表面(100)和(110)的能量增益远小于(111)表面的能量增益:它们约为0.1 eV。与理想表面相比,我们发现空位附近的电荷重建在产生上述能量增益方面起着重要作用。实际上,我们发现空位周围镍原子上的电荷密度增加,如果氧被吸附在其附近,则会导致离子型Ni-O键增强。作为研究空位的存在对氧化物层生长的第一阶段的影响的一种手段,我们研究了三个表面上氧原子的偏析过程。我们的结果表明,最多四个氧原子可以有利地聚集在(111)表面单空位内部和附近的吸附位点。该数目在(110)表面还原为两个氧原子,在(100)表面还原为仅一个氧原子。

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