Intermediate rinse improves post-etch via cleans

摘要

Post-etch residue removal using a fluoride-based semi-aqueous chemistry (SAC) has shown improvement over industry-standard, hydroxylamine-based (HDA) processing. In a joint study by FSI International, Chaska, MN, and EKC Technology, Hay-ward, CA, and headed by FSI's John Diedrick, an intermediate DI water rinse added between two chemical dispense steps effectively removed post-etch residue in <20 min of total processing time at room temperature, compared to 40 min at 75℃ in a typical HDA process.