The advanced state of MOCVD for UHB-LEDs

摘要

Fabrication of the multicomponent structure of ultrahigh-brightness light-emitting diodes (UHB-LED) with metal organic chemical-vapor deposition (MOCVD) requires accurate control of layer thickness to better than 1%, 1% composition uniformity over the substrate surface area, and control of the heterostructure interface quality and sharpness, the latter on the order of one monolayer. The light-producing structure of UHB-LEDs often involves 50-60 deposited layers with different doping concentrations and layer thicknesses and all depositions done sequentially during a process that can take up to 5 hr in one batch reactor load.