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It's springtime for creative engineers

机译:创意工程师的春天到了

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It's springtime for engineers in electronics, computing, and chip architecture. That was the message of a stimulating talk by Paolo Gargini, Intel Fellow and guiding light for the International Technology Roadmap for Semiconductors, at the last SEMICON West. He pointed out that since the early 1970s, performance improvement for every new chip generation was a side benefit of following shrink rules set up for IC transistors by IBM's Robert Dennard in 1973. Chip designers got faster circuits for free! Sadly, we all eventually learned that there is no such thing as a free lunch. As conductors got narrower, resistivity mounted. As they were crammed closer together, capaci- tance increased. A higher RC time constant slowed circuits. Copper helped for awhile, but it has taken longer to figure out how to do low-κ dielectrics for lowering capacitance. Meanwhile, the gate dielectric got too thin, raising leakage Current, and short channel effects set in as the gate length shrunk. It has been tough to find good high-κ dielectric/metal gate combinations to get a thicker effective oxide thickness and to eliminate the polysilicon depletion layer problem.
机译:现在是电子,计算和芯片架构工程师的春天。这是英特尔研究员Paolo Gargini进行的令人振奋的演讲的信息,也是上届SEMICON West上国际半导体技术路线图的指南灯。他指出,自1970年代初以来,遵循1973年IBM罗伯特·丹纳德(Robert Dennard)为IC晶体管设定的收缩规则,每一代新芯片的性能改进都是一个附带好处。可悲的是,我们最终都知道没有免费的午餐。随着导体变窄,电阻率增加。当它们挤在一起时,电容增加。较高的RC时间常数会使电路变慢。铜起到了一段时间的作用,但是花了更长的时间才能弄清楚如何制作低k电介质来降低电容。同时,栅极电介质太薄,增加了泄漏电流,并且随着栅极长度的缩短,出现了短沟道效应。很难找到好的高κ介电/金属栅极组合以获得更厚的有效氧化物厚度并消除多晶硅耗尽层问题。

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