On-the-fly threshold voltage measurement for BTI characterization

摘要

Advances in traditional CMOS scaling techniques are reaching their limits, bringing up the need for new materials and novel device designs. Along with these new materials and designs comes a new emphasis on latent failure mechanisms and the need for more reliability testing. Failure mechanisms such as bias temperature instability require high speed source and measure capability to resolve fast recovery effects. An examination of measurement techniques, including on-the-fly measurements, will aid in implementing effective measurement solutions with the proper instrumentation.