Researchers at the National Institute of Standards and Technology (NIST) have updated a well-known technique for measuring material properties to gauge the mechanical strength of low-k films, to help devicemakers better identify interconnect dielectric film candidates. Low-k dielectric layers are increasingly utilized as insulating films on top of a substrate (e.g. silicon) and between layers of conductors and components in semiconductor devices. Increasing their porosity has helped prevent cross-talk (electrical interference) but also makes them more brittle, affecting yields. NIST notes that no accurate method has been devised to measure fracture resistance of such films, which limits design and development of new and improved dielectrics.
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