A comprehensive EUV lithography model

摘要

As EUV lithography nears pilot-line stage, photolithography modeling becomes increasingly important for engineers to build viable, production-worthy processes. In this paper, we present a comprehensive, calibrated lithography model that includes optical effects such as mask shadowing and flare, combined with a stochastic resist model that can predict effects such as line-width roughness. This model is used to investigate EUV photoresist technology and the effect of flare and lens aberrations on the process window. Results indicate that a comprehensive model is required to provide a realistic evaluation of EUV lithography processes.