FD-SOI targets moblie applications

摘要

The IC industry has been innovative with the introduction of new materials and process modules like stressors, high-k and metal gates (HKMG). It has been very conservative in keeping the bulk planar transistor structure. As a result, the planar transistor has become a highly doped device with decreasing dimensions. Moreover, at these smaller dimensions, transistor characteristics suffer from statistical fluctuations like random dopant fluctuations (RDF) in the channel, which impair device matching in sub-l00nm circuits. This has become an important problem beyond node 28/32nm limiting VDD reduction, thus limiting the reduction of both dynamic and standby power consumption.