Scatterometry measurement for gate ADI and AEI CD of 28nm metal gates

摘要

Metal gate AEI: correlation to TEM. To verify in-line scatterometry measurement accuracy, a transmission electron microscope (TEM) was used as a reference. The TEM measured two sites on each wafer, at the center and at the edge, for a total of 14 TEM data points in the DOE wafer set. The scatterometry measurement values were compared with the corresponding TEM values. The MG/HK CD and MG/HK recess results are shown in Fig. 4.