Proton response of low-frequency noise in 0.20 μm 90 GHz f_T UHV/CVD SiGe HBTs

摘要

The influence of proton exposure on the low-frequency noise of 0.20 μm UHV/CVD SiGe HBTs is presented. The noise degradation after irradiation shows a strong dependence on transistor geometry. Our previously developed noise theory is used to understand this behavior, and a comparison is made between these new results on third generation SiGe technology and our prior results on the first generation SiGe technology.