Scaleable large-signal model of 0.18 μm CMOS process for rf power predictions

摘要

The design of the radio frequency integrated circuits by CMOS technologies requires an accurate and scaleable model, which can be valid in the GHz range for device non-linear behavior predictions [IEEE Trans Solid State Circuits 35 (2000) 186; IEEE J. Solid-State Circuit 33 (1998) 1510]. A modified 0.18 μm gate-length MOSFET rf large-signal model based on BSIM3v3 is presented. This large-signal model includes the required parasitic components to forecast device dc and rf characteristics. Additionally, the microwave load-pull and digital modulated evaluations have been carried out to verify the accuracy of this model, where a good agreement with experimental results can be achieved.