Design and optimization of vertical surrounding gate MOSFETs for enhanced transconductance-to-current ratio (g_m/I_(ds))

摘要

The present analysis proposes a new technique to optimize the device parameters for improving the transconductance-to-current ratio of vertical surrounding gate (VSG) and double gate (DG) MOSFETs. Advantages of VSG MOSFETs over DG MOSFETs in terms of transconductance-to-current ratio (g_m/I_(ds)) are examined in detail. Model shows new opportunities for realizing future ULSI circuits with VSG MOSFETs. Close proximity with published results confirms the validity of the present model.