Enhancement of hole injection for nitride-based light-emitting devices

S.M. Komirenko; K.W. Kim; V.A. Kochelap; J.M. Zavada

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Enhancement of hole injection for nitride-based light-emitting devices

机译：增强氮化物基发光器件的空穴注入

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摘要

A novel device design is proposed for a strong enhancement of hole injection current in nitride-based light-emitting heterostructures. Preliminary calculations show orders of magnitude increase in injected hole current when using the proposed superlattice hole injector device based on the real-space transfer concept.

机译：提出了一种新颖的器件设计，用于强烈增强氮化物基发光异质结构中的空穴注入电流。初步计算表明，使用基于实空间转移概念的超晶格空穴注入器装置时，注入空穴电流的数量级增加。

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来源
《Solid-State Electronics》 |2003年第1期|p.169-171|共3页
作者
S.M. Komirenko; K.W. Kim; V.A. Kochelap; J.M. Zavada;
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作者单位

Department of Electrical and Computer Engineering, NC State University, Raleigh, NC 27695, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类一般性问题;
关键词
UV emitter; group-III nitride; enhanced hole concentration; hole injection; superlattice;

机译：紫外线发射器;III族氮化物提高空穴浓度;空穴注入超晶格;

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1. Modified Conducting Polymer Hole Injection Layer for High-Efficiency Perovskite Light-Emitting Devices: Enhanced Hole Injection and Reduced Luminescence Quenching [J] . Peng Xue-Feng, Wu Xiao-Yan, Ji Xia-Xia, Journal of physical chemistry letters . 2017,第19期

机译：用于高效钙钛矿发光器件的改进的导电聚合物空穴注入层：增强孔注射和降低发光淬火
2. Efficient hole injection in blue organic light-emitting devices by using a double hole injection layer to improve chromaticity and electrical characteristics [J] . Lin H.-P., Zhou F., Zhang X.-W., Current applied physics: the official journal of the Korean Physical Society . 2011,第3期

机译：通过使用双空穴注入层提高色度和电特性，在蓝色有机发光器件中进行有效的空穴注入
3. Improved hole injection and transport of organic light-emitting devices with an efficient p-doped hole-injection layer [J] . Dan-Dan Zhang, Jing Feng, Hai Wang, Applied Physicsletters . 2009,第26期

机译：具有有效的p掺杂空穴注入层的有机发光器件的空穴注入和传输得到改善
4. Mechanisms of enhanced hole-injection in organic light-emitting devices with MoO_3 layers [C] . Chang-Ting Lin, Guan-Ru Lee, Chih-I Wu, International Display Manufacturing Conference amp; FPD Expo 2007(IDMC'07); 20070703-06; Taipei(CT) . 2007

机译：具有MoO_3层的有机发光器件中增强空穴注入的机理
5. Effect of current crowding and device structure on operation of gallium nitride-based light-emitting diodes. [D] . Guo, Xiaoyun. 2002

机译：电流拥挤和器件结构对氮化镓基发光二极管工作的影响。
6. Enhanced performance of nitride-based ultraviolet vertical-injection light-emitting diodes by non-insulation current blocking layer and textured surface [O] . Yen Chih Chiang, Bing Cheng Lin, Kuo Ju Chen, 2014

机译：非绝缘电流阻挡层和带纹理的表面增强了氮化物基紫外垂直注入发光二极管的性能
7. Enhancement of hole injection for nitride-based light-emitting devices [O] . Komirenko, S. M., Kim, K. W., Kochelap, V. A., 2002

机译：增强氮化物基发光器件的空穴注入
8. Short-Wavelength Light-Emitting Devices With Enhanced Hole Injection Currents [R] . Kochelap, V. A. 2005

机译：具有增强空穴注入电流的短波长发光器件

Enhancement of hole injection for nitride-based light-emitting devices

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