Buried-channel SiGe HMODFET device potential for micropower applications

摘要

In this paper, intrinsic device parameters, directly extracted from buried-channel n-HMODFET devices biased at micropower supply levels are presented. Sub-threshold region peaks in plots of intrinsic transit frequency and trans-conductance vs. bias clearly exemplify the devices suitability for RF/micropower applications. Measurements are also presented for a SiGe n-HMODFET inverting amplifier and self-biased dynamic load with a maximum (G_(MAX)) power gain of 26 dB and corner frequency of 40 MHz recorded for an amplifier device power-drain of just 77 μW and a total power drain of 150 μW. A comparison of gain-efficiency (maximum gain vs. total input power) at micropower (200 mV FDD) and full power (3 V V_(DD)) yields 4x greater efficiency at micropower supply levels.