Low frequency noise and hot-carrier reliability in advanced SOI MOSFETs

摘要

The scaling of the front gate oxide thickness in SOI devices has resulted in gate-induced Floating Body effect observed for the first time in 0.13μm SOI CMOS technologies with ultra-thin gate oxide (sub-2 nm). We give an overview of this new kind of Floating Body effect. Moreover, with SOI to be adapted as a mainstream technology in the forthcoming years, two issues are still of a critical interest regarding circuit applications: low frequency noise behavior and hot-carrier reliability in state-of-the-art SOI MOSFETs. Both are thoroughly investigated in advanced SOI devices in this paper.