A modified transferred-electron high-field mobility model for GaN devices simulation

摘要

An approximation formula for electron high-field mobility in GaN is proposed. One is tested in wide range of temperatures and doping concentrations and is able to replicate the specific electron drift velocity dependence on electric field in GaN more accurately than conventionally used Canali and transferred-electron models. The simulations of the current-voltage characteristics of GaN metal-semiconductor-metal structure are performed for considered electron high-field mobility models. Simulations are compared with available experimental data.