Modeling the DC gain of 4H-SiC bipolar transistors as a function of surface recombination velocity

摘要

Two dimensional device modeling is used to investigate the differential DC current gain in 4H-SiC bipolar junction transistors using surface recombination velocity as one of the physical variables affecting the current gain. The simulated differential gain is compared with the measured experimental DC gain of transistors with two different emitter lengths. The comparison and the analysis made support the trend in modeling the DC gain as a function of surface recombination velocity and show that higher gain can be obtained for transistors with lower surface recombination velocity.