Band offsets in heterostructures by spin splittings

摘要

The conduction band offset differences near the Γ point of the lowest Γ_1-like conduction band of GaAs/AlAs heterostructures due to spin splittings were obtained for different k values in both < 110 > and < 100 > directions. The conduction band offset differences vanish along the < 100 > directions and follow a cubic dependence for small wave vectors along < 110 > directions. The valence band offset calculated in the sp~3S~* configuration using the recently reformulated tight binding method is 0.46 eV in good agreement with experiments.