Effective resistivity of fully-processed SOI substrates

摘要

We introduce in this work a new quality factor called effective resistivity (ρ_(eff)), which is used to characterize and fairly compare the substrate resistivity of fully processed SOI wafers. The impacts on ρ_(eff) (and thus on microwave losses) of the bias (V_a), fixed oxide charges (Q_(ox)), traps at the SiO_2/Si interface (D_(it)), oxide thickness (t_(ox)) and line geometry are quantified and discussed for the first time. Different design and technological conclusions are drawn.