Modeling of single-π equivalent circuit for on-chip spiral inductors

摘要

We present a novel methodology to extract model parameters from measured S-parameter for silicon on-chip spiral inductor. The current approach is based on the analyses of a set of characteristic functions, which exhibit well-defined linear dependence on other functions or variables such as ω~2 in certain frequency range, and the model parameters can be derived from the linear coefficients of the characteristic functions. As demonstrated for a nine-element single-π equivalent circuit, the extracted parameters can simulate the inductor with a good precision over broad frequency up to 10 GHz.