Modeling of non-uniform heat generation in LDMOS transistors

摘要

This work is devoted to the heat dissipation analysis in LDMOS transistors operating at high current conditions. Hence, a new expression for the Joule heat generated by electron current is provided to simplify the LDMOS electro-thermal modeling, thus giving physical insight and predicting hot spots. The model is based on the semiconductor physics and the required input data are the device geometrical and technological parameters as well as the applied bias.