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Tuning nonlinear susceptibility in strained AlGaAs/InGaAs quantum cascade lasers

机译:调整应变AlGaAs / InGaAs量子级联激光器中的非线性磁化率

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This paper explores enhancement of nonlinear susceptibility in strained quantum cascade lasers (QCLs) that lead to unique intracavity characteristics that include frequency mixing producing both fundamental and higher order modes that propagate freely within a GaAs matrix. Doing so provides a QCL cavity design with emission near the 3.5 μm range, a region suitable for applications within the 3-5 μm atmospheric transmission window. In this study, a self-consistent Schrodinger-Poisson solver was employed to analyze the effects of strain within an AlGaAs/InGaAs active region between AlGaAs/GaAs injectors on a [ 111 ] GaAs matrix for the purpose of enhancing nonlinear susceptibility. Strain relief available through the use of [111] GaAs allows increased indium composition in the active region and results in observation of second-harmonics below the 5 μm range with tunable optical dipole moments and oscillator strengths. Results demonstrate the feasibility of strained AlGaAs/InGaAs devices on GaAs for producing higher order harmonics that lay below the 4 μm spectral limit.
机译:本文探讨了应变量子级联激光器(QCL)中非线性磁化率的增强,该特性导致了独特的腔内特性,包括混频产生基本模式和高阶模式,这些模式在GaAs矩阵内自由传播。这样做可以提供QCL腔设计,其发射在3.5μm范围内,该区域适合在3-5μm大气透射窗口内使用。在这项研究中,采用自洽的Schrodinger-Poisson求解器来分析[111] GaAs基质上AlGaAs / GaAs注入器之间的AlGaAs / InGaAs活性区域内的应变影响,以增强非线性磁化率。通过使用[111] GaAs可以消除应力,从而增加了有源区中的铟成分,并在5μm范围内观察到了具有可调光偶极矩和振荡器强度的二次谐波。结果表明,在GaAs上使用应变AlGaAs / InGaAs器件产生低于4μm光谱极限的高次谐波的可行性。

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