Universal compact model for long- and short-channel Thin-Film Transistors

摘要

We present a compact modelling scheme valid for the different types of Thin-Film Transistors (TFTs) including a-Si, poly-Si, ZnO, and organic TFTs. This modelling is based on the use eight-parameter universal model, valid for all types of TFTs, which allows easy extraction. This universal basic TFT model is used as a first iteration in complete models adapted to each type of TFTs, in order to calculate the intrinsic voltage bias and the rest of parameters, which depend on the channel current or on the bias. A contact transistor is added between the source and the intrinsic device in order to model the nonlinear contact effects (from the source contact into the film), which may affect the I-V characteristics of short-channel devices. Good agreement has been found with experimental measurements of long and short-channel TFTs.