A new analytical compact model for two-dimensional finger photodiodes

摘要

A new physically based circuit simulation model for finger photodiodes has been proposed. The approach is based on the solution of transport and continuity equation for generated carriers within the two-dimensional structure. As an example we present results of a diode consisting of N~+-fingers located in a P-well on top of a N-type buried layer integrated in a P-type silicon substrate (N~+/PW/ NBL/Psub finger photodiode). The model is capable to predict the sensitivity of the diode in a wide spectral range very accurately. The structure under consideration was fabricated in an industrial 0.6 urn BiCMOS process. The good agreement of simulated sensitivity data with results of measurements and numerical simulations demonstrate the high quality of our model.