机译:评估32和22 nm技术的LSTP MOSFET中的统计变异性
Dept. of Electronics and Electrical Engineering, University of Glasgow, Glasgow, UK;
Dept. of Electronics and Electrical Engineering, University of Glasgow, Glasgow, UK;
Dept. of Electronics and Electrical Engineering, University of Glasgow, Glasgow, UK;
Dept. of Electronics and Electrical Engineering, University of Glasgow, Glasgow, UK;
Dept. of Electronics and Electrical Engineering, University of Glasgow, Glasgow, UK;
statistical variability; trapped charge; thin-body devices; random discrete dopant'; line edge roughness;
机译:全面研究22 nm全耗尽超薄SOI MOSFET中的统计变异性
机译:基于TCAD的U型通道FDSOI N-MOSFET统计变异抗扰度研究,SUB-7-NM技术
机译:45纳米技术节点LP N-MOSFET中统计变异源的定量评估
机译:评估45、32和22nm技术节点LP N-MOSFET上的固有参数波动
机译:用于亚22纳米节点数字CMOS逻辑技术的基于锗的量子阱沟道MOSFET的工艺集成和性能评估
机译:n型SixGe1-x纳米线MOSFET下一代技术的变异性预测
机译:评估45,32和22nm工艺节点Lp N-mOsFET的固有参数波动