Dual metal gate FinFET integration by Ta/Mo diffusion technology for V_t reduction and multi-V_t CMOS application

摘要

Dual metal gate CMOS FinFETs have been integrated successfully by the Ta/Mo interdiffusion technology. For the first time, low-V_t CMOS FinFETs representing on-current enhancement and high-V_t CMOS FinFETs reducing stand-by power dramatically, namely multi-V_t CMOS FinFETs, are demonstrated by selecting Ta/ Mo gates for n or pMOS FinFETs with non-doped fin channels. The dual metal gate FinFET SRAM with a low-V_t configuration is demonstrated with excellent noise margins at a reduced supply voltage.