机译:通过等离子体浸没离子注入结合了氮的高k /金属栅极的SiGe沟道MOS器件的电学特性
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300/3, Taiwan, ROC;
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300/3, Taiwan, ROC;
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300/3, Taiwan, ROC;
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300/3, Taiwan, ROC;
Physics Division, Institution of Nuclear Energy Research, Taoyuan, Taiwan, ROC;
Physics Division, Institution of Nuclear Energy Research, Taoyuan, Taiwan, ROC;
high-k gate dielectric; SiGe; Ge content; PⅢ nitridation;
机译:等离子体浸没离子注入氮对高k栅MOS器件电学特性的影响
机译:通过将氮与等离子体浸没离子注入(PIII)结合来改善高k栅极MOS器件的电特性
机译:等离子体浸没离子注入改善了氮化高k栅极电介质的Ge MOSFET器件的电特性和可靠性
机译:通过等离子浸入离子注入对具有SiGe通道的高k栅MOS器件的电学特性进行氮掺入
机译:对用于下一代MOS栅极电介质的氧化锆和氮结合的氧化锆的电气,材料和可靠性特性以及工艺可行性的评估。
机译:在存在随机界面陷阱的情况下16nm栅极高κ/金属栅极体FinFET器件的电特性波动
机译:氧分压对在应变SiGe上通过脉冲激光沉积生长的HfAlO高k栅极电介质的结构和电特性的影响