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The relationship between hydrogen atoms and photoluminescent properties of porous silicon prepared by different etching time

机译:不同刻蚀时间制得的氢原子与多孔硅光致发光性能的关系

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摘要

In this paper, the photoluminescence of as-prepared porous silicon were investigated. The visible light emission is associated with surface defects states of porous silicon. The hydrogen atoms on porous silicon surface can passivate irradiative centers and lead to the increase of emission intensity, which can be proved by the microwave-detected photoconductivity decay measurements.
机译:本文研究了所制备的多孔硅的光致发光。可见光发射与多孔硅的表面缺陷状态有关。多孔硅表面上的氢原子可以钝化辐照中心并导致发射强度增加,这可以通过微波检测的光电导衰减测量来证明。

著录项

  • 来源
    《Solid-State Electronics》 |2010年第4期|p.452-456|共5页
  • 作者单位

    Department of Electronic Information Materials, Shanghai leading Academic Disciplines, Shanghai University, Shanghai 200072, PR China;

    Department of Electronic Information Materials, Shanghai leading Academic Disciplines, Shanghai University, Shanghai 200072, PR China;

    Department of Electronic Information Materials, Shanghai leading Academic Disciplines, Shanghai University, Shanghai 200072, PR China;

    Department of Electronic Information Materials, Shanghai leading Academic Disciplines, Shanghai University, Shanghai 200072, PR China;

    Department of Electronic Information Materials, Shanghai leading Academic Disciplines, Shanghai University, Shanghai 200072, PR China;

    Department of Electronic Information Materials, Shanghai leading Academic Disciplines, Shanghai University, Shanghai 200072, PR China;

    Department of Electronic Information Materials, Shanghai leading Academic Disciplines, Shanghai University, Shanghai 200072, PR China;

    Ningbo Heli Mould Technology Shareholding Co., Ltd., Industrial Park of Xiangshan County, Zhejiang 315700, PR China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    porous silicon; photoluminescence; μ-PCD measurements;

    机译:多孔硅光致发光μ-PCD测量;

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