机译:不同刻蚀时间制得的氢原子与多孔硅光致发光性能的关系
Department of Electronic Information Materials, Shanghai leading Academic Disciplines, Shanghai University, Shanghai 200072, PR China;
Department of Electronic Information Materials, Shanghai leading Academic Disciplines, Shanghai University, Shanghai 200072, PR China;
Department of Electronic Information Materials, Shanghai leading Academic Disciplines, Shanghai University, Shanghai 200072, PR China;
Department of Electronic Information Materials, Shanghai leading Academic Disciplines, Shanghai University, Shanghai 200072, PR China;
Department of Electronic Information Materials, Shanghai leading Academic Disciplines, Shanghai University, Shanghai 200072, PR China;
Department of Electronic Information Materials, Shanghai leading Academic Disciplines, Shanghai University, Shanghai 200072, PR China;
Department of Electronic Information Materials, Shanghai leading Academic Disciplines, Shanghai University, Shanghai 200072, PR China;
Ningbo Heli Mould Technology Shareholding Co., Ltd., Industrial Park of Xiangshan County, Zhejiang 315700, PR China;
porous silicon; photoluminescence; μ-PCD measurements;
机译:在不同刻蚀时间下通过电化学刻蚀制备的纳米结构多孔硅的表面和整体结构性质
机译:在不同刻蚀时间下通过电化学刻蚀制备的纳米结构多孔硅的表面和整体结构性质
机译:刻蚀时间对电阳极氧化法制备p型多孔硅光学性能和热性能的影响
机译:阳极蚀刻氧化法在单晶硅上制备多孔硅冷阴极的电子发射性能
机译:氢钝化和氧化的多孔硅的深度依赖性光致发光响应。
机译:电化学刻蚀制备多孔硅的形貌和纳米结构特征
机译:蚀刻时间对电化学蚀刻(ECE)制备多孔硅的理想因子和动态电阻的影响