机译:低温(T <180°C)处理的高度可控的双栅极微晶硅薄膜晶体管
Institute of Electronics and Telecommunications ofRennes, IETR. University ofRennes I, Bat. 11B, Campus de Beaulieu, 35042 Rennes Cedex, France;
Institute of Electronics and Telecommunications ofRennes, IETR. University ofRennes I, Bat. 11B, Campus de Beaulieu, 35042 Rennes Cedex, France;
Institute of Electronics and Telecommunications ofRennes, IETR. University ofRennes I, Bat. 11B, Campus de Beaulieu, 35042 Rennes Cedex, France;
Institute of Electronics and Telecommunications ofRennes, IETR. University ofRennes I, Bat. 11B, Campus de Beaulieu, 35042 Rennes Cedex, France;
Institute of Electronics and Telecommunications ofRennes, IETR. University ofRennes I, Bat. 11B, Campus de Beaulieu, 35042 Rennes Cedex, France;
CMOS electronics; Low temperature substrate; Microcrystalline silicon; DG-TFT;
机译:非晶In-Zn-O薄膜晶体管的高度可靠的低温(180℃)固溶处理钝化
机译:高度可靠的低温(180°C)溶液处理的无定形Zn-O薄膜晶体管的钝化
机译:在低温下通过低频感应耦合等离子体制造的高掺杂p型微晶硅薄膜
机译:可靠的低温(180℃)溶液钝化处理,用于非晶溶液In-Zn-O薄膜晶体管的钝化处理
机译:固溶处理后过渡金属氧化物半导体电子产品:高性能薄膜晶体管和/或低温处理薄膜
机译:通过插入TiO2中间层改善低温处理的金属/ n-Si欧姆接触的可弯曲单晶硅纳米膜薄膜晶体管
机译:低温热退火对微晶硅薄膜晶体管性能的影响
机译:先进显示技术中的低温多晶硅薄膜晶体管