High mobility compressive strained Si_(0.6)Ge_(0.5) quantum well p-MOSFETs with higher-k/metal-gate

摘要

Strained SiGe quantum well p-MOSFETs with LaLuO_3 higher-k dielectric were fabricated and characterized. The strained Si/strained Si_(0.5)Ge_(0.5)/strained SOI heterostructure transistors showed good output and transfer characteristics with an /on//off ratio of 10~5. The extracted hole mobility shows an enhancement of about 2.5 times over Si universal hole mobility and no degradation compared to HfO_2 or even SiO_2 gate dielectric devices.