机译:具有堆叠HfAlO-SiO_2隧道层的Pd纳米晶体存储器的改进特性
Department of Electronic Engineering, Feng-Chia University, Taichung 40724, Taiwan, ROC;
Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC;
Department of Electronic Engineering, Feng-Chia University, Taichung 40724, Taiwan, ROC;
Department of Electronics Engineering and Institute of Elect;
ronics, National Chiao Tung University. Hsinchu, Taiwan, ROC;
National Nairn Device laboratories, Hsinchu, Taiwan, ROC;
hfalo-sio_2 tunnel layer; pd nanocrystal; thermally induced trap; asymmetric tunnel barrier; n_2 plasma; memory characteristic;
机译:不同隧道层对基于Pd纳米晶体的非易失性存储器保留特性的影响
机译:Al2O3 / HfO2 / Al2O3堆叠隧穿层在氧化g纳米晶体非易失性存储器上的厚度依赖性
机译:低能离子束在栅氧化层中具有密集堆叠的硅纳米晶层的MOSFET的存储特性
机译:基于层状HfSiON的隧道堆叠,可降低电压并提高TANOS存储器的可靠性
机译:磁性隧道结中绝缘层的特性及其在存储设备中的应用
机译:HfO2 / SiO2叠层隧道电介质的SiN薄膜中离子注入能量对Ge纳米晶体合成的影响
机译:通过低能离子束合成的栅极氧化物中具有致密堆叠的硅纳米晶体层的mOsFET的存储特性