机译:GaAs HEMT作为敏感应变仪
Key Laboratory on Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, PR China;
Key Laboratory on Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, PR China;
Key Laboratory on Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, PR China;
Key Laboratory on Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, PR China;
Key Laboratory on Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, PR China;
Key Laboratory on Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, PR China;
Key Laboratory on Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, PR China;
gaas; high electron mobility transistor; piezoresistive effect; gauge factor;
机译:80-200 nm栅极长度的比较Al / sub 0.25 / GaAs / GaAs /(GaAs:AlAs),Al / sub 0.3 / GaAs / In / sub 0.15 / GaAs / GaAs和In / sub 0.52 / AlAs / In / sub 0.65 / GaAs / InP HEMT
机译:氢选择性预处理的AlGaAs / InGaAs p-HEMT及其在增强/耗尽模式HEMT中的应用
机译:高应变对InAlAs / InGaAs伪晶HEMT中噪声特性的影响
机译:超灵敏自旋电子应变片传感器,规格因子为5000,并演示了Spin-MEMS麦克风
机译:通过使用应变平衡和分布布拉格反射器优化InGaAs量子阱,改善GaAs太阳能电池中的子带隙载体收集
机译:Si上基于GaAs的谐振隧穿二极管(RTD)外延用于高度敏感的应变仪应用
机译:Si上基于GaAs的谐振隧穿二极管(RTD)外延,用于高度敏感的应变仪应用
机译:基于Gaas / alGaas的多量子阱高电子迁移率晶体管(HEmT)的分析和数值研究