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Capacitor-less A-RAM SOI memory: Principles, scaling and expected performance

机译:无电容器的A-RAM SOI存储器:原理,扩展和预期性能

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摘要

Based on numerical TCAD simulations, the novel capacitor-less A-RAM memory cell is detailed in terms of electrostatic effects, transient operation and retention time. The particular double-body device architecture on SOI is beneficial for better scalability than conventional lT-DRAMs. Its dual body partitioning suppresses the supercoupling effect in SOI; the two types of carriers can coexist inside ultrathin fully depleted transistors. Electrons and holes are accommodated in different bodies, separated by an insulator layer, but remain electrostatically coupled. A-RAM features easy discrimination of'0' and '1' states, simple control waveforms and very promising performance.
机译:基于TCAD数值模拟,该新型无电容器A-RAM存储单元详细介绍了静电效应,瞬态操作和保留时间。 SOI上特定的双体设备架构比传统的IT-DRAM具有更好的可扩展性。它的双体分割抑制了SOI中的超耦合效应。两种类型的载流子可以共存于超薄的全耗尽晶体管内部。电子和空穴被容纳在不同的主体中,被绝缘体层隔开,但是保持静电耦合。 A-RAM具有易于区分“ 0”和“ 1”状态,简单的控制波形以及非常有前途的性能的特点。

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