Control of threshold voltage and improved subthreshold swing in enhancement-mode InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor

摘要

The InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with an oxidized GaAs gate by liquid phase oxidation (LPO) is demonstrated. With the help of the LPO, the threshold voltage (V_(th)) can be shifted positively to 0.07 V, and enhancement-mode MOS-PHEMT is fabricated. The device with a gate metal of 1 x 100 μm~2 shows a maximum transconductance of 171 mS/mm at V_(DS) - 5 V and a maximum drain current density of 182 mA/mm at V_(GS) = 2 V. It also exhibits a lower leakage current and an improved subthreshold swing compared to the referenced Schottky-gate InGaP/InGaAs PHEMT.