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Efficiency droop behavior of GaN-based light emitting diodes under reverse-current and high-temperature stress

机译：GaN基发光二极管在反向电流和高温应力下的效率下降行为

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摘要

The efficiency droop behavior of GaN-based light emitting diodes (LEDs) is studied when the LEDs are under reverse-current and high-temperature stress tests respectively. It is found that reverse-current stress mainly induces additional non-radiative recombination centers within the active region of InGaN/GaN multiple quantum wells, which degrade the overall efficiency of the GaN LED under test but push the peak-efficiency-current towards higher magnitude. The up-shift of peak-efficiency-current can be explained by a rate-equation model in which the newly-created defects by reverse-current stress enlarge the dominant low-current region of non-radiative recombinations. Comparatively, high-temperature stress mainly increases the series resistance of the LED under test. Although the overall efficiency of the GaN LED also drops, there is no shift of peak-efficiency-current induced by the high-temperature stress.
机译：研究了分别在反向电流和高温应力测试下，GaN基发光二极管（LED）的效率下降行为。发现反向电流应力主要在InGaN / GaN多量子阱的有源区内引起额外的非辐射复合中心，这降低了被测GaN LED的整体效率，但将峰值效率电流推向了更高的幅度。峰值效率电流的上移可以通过速率方程模型来解释，在该模型中，由反向电流应力产生的新缺陷扩大了非辐射复合的主要低电流区域。相比之下，高温应力主要增加了被测LED的串联电阻。尽管GaN LED的整体效率也下降了，但高温应力引起的峰值效率电流没有偏移。

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  • 来源
    《Solid-State Electronics》 |2011年第1期|p.9-13|共5页
  • 作者

    Xianjie Shao; Dawei Yan; Hai Lu; Dunjun Chen; Rong Zhang; Youdou Zheng;

  • 作者单位

    Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, China,Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China,School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;

    Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, China,Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China,School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;

    Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, China,Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China,School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China, Nanjing Electron Devices Institute, Nanjing 210016, China;

    Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, China,Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China,School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;

    Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, China,Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China,School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;

    Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, China,Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China,School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    gan; light emitting diode; efficiency droop; stress test;

    机译：甘;发光二极管;效率下降;压力测试;

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