Channel scaling of hybrid GaN MOS-HEMTs

摘要

In this paper, we have studied the effect of systematic downscaling of MOS channel length of the performance of the hybrid GaN MOS-HEMT with numerical simulations. The improvement in on-state conduction, together with concomitant short channel effects, including drain induced barrier lowering (D1BL) is quantitatively evaluated. A specific on-resistance of 2.1 mΩ cm~2 has been projected for a MOS channel length of 0.38 μm. We also have assessed the impact of high-k gate dielectrics, such as Al_2O_3. In addition, we have found that adding a thin GaN cap layer on top of AlGaN barrier can help reducing short channel effects.