3D NAND flash memory with laterally-recessed channel (LRC) and connection gate architecture

摘要

A three-dimensional (3D) stacked bit-line NAND flash memory is investigated. The fabrication process flow for the formation of a laterally-recessed bit-line stack is described. Program operation is simulated using a stacked bit-line structure. Inter-layer interference (ILI) is addressed and the minimum isolation oxide thickness between stacked bit-lines is extracted. Simple device and array with the laterally-recessed bit-line stack are fabricated and electrical characteristics are measured. A new array architecture having a connection gate is designed for the 3D stacked bit-line NAND flash memory application.