机译:补偿La硅酸盐栅极电介质中的氧缺陷,以使用氧退火工艺改善高k /金属栅极MOSFET中的有效迁移率
Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
Interdisciplinary Graduate School of Science, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
Interdisciplinary Graduate School of Science, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
Interdisciplinary Graduate School of Science, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
Interdisciplinary Graduate School of Science, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
high-k gate dielectrics; rare earth oxides; silicate; oxygen vacancy; effective mobility;
机译:具有金属栅电极的高k栅介电Ge MOSFET的载流子迁移模型
机译:具有HfO_2高k栅极电介质的Mo-金属门控MOSFET的工艺集成问题
机译:氧沉积后退火提高了TDDB的可靠性和HfO_2高k /金属栅MOSFET器件的特性
机译:具有高k /金属栅叠层的p-MOSFET的V
机译:快速热CVD高k栅极电介质和CVD金属栅电极的技术开发和研究,用于未来的ULSI MOSFET器件集成:氧化锆和氧化ha。
机译:栅堆叠结构和工艺缺陷对32 nm工艺节点PMOSFET中NBTI可靠性的高k介电依赖性的影响
机译:180nm金属栅极,高k电介质,无注入III-V mOsFET,跨导超过425μs/μm