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机译:用于热/冷数据混合应用的TLC NAND闪存的系统级读取干扰抑制技术
Chuo Univ, Dept Elect Elect & Commun Engn, Bunkyo Ku, Korakuen Campus,Bldg 2,1-13-27 Kasuga, Tokyo 1128551, Japan;
Chuo Univ, Dept Elect Elect & Commun Engn, Bunkyo Ku, Korakuen Campus,Bldg 2,1-13-27 Kasuga, Tokyo 1128551, Japan;
Chuo Univ, Dept Elect Elect & Commun Engn, Bunkyo Ku, Korakuen Campus,Bldg 2,1-13-27 Kasuga, Tokyo 1128551, Japan;
Chuo Univ, Dept Elect Elect & Commun Engn, Bunkyo Ku, Korakuen Campus,Bldg 2,1-13-27 Kasuga, Tokyo 1128551, Japan;
Chuo Univ, Dept Elect Elect & Commun Engn, Bunkyo Ku, Korakuen Campus,Bldg 2,1-13-27 Kasuga, Tokyo 1128551, Japan;
Bit-error rate (BER); Error-correcting code (ECC); NAND flash memory; Read-disturb error; Solid-state drive (SSD); Triple-level cell (TLC);
机译:通过针对高可靠性和低功耗企业固态硬盘(SSD)的铁电(Fe)-NAND闪存存储器的存储单元V-TH优化,改善了读取干扰,程序干扰和数据保留
机译:抑制3D堆栈NAND闪存的热载流子注入效应引起的读取干扰故障
机译:通过自增强读取方案提高多层NAND闪存的读取干扰特性
机译:多功能的TLC NAND闪存控制可将读取干扰错误减少85%,并将读取周期延长6.7倍,适用于云数据中心的读写热数据和冷数据
机译:使用大规模NAND闪存的固态数据存储电路和系统。
机译:铁电栅极场效应晶体管的最新进展及其在非易失性逻辑和FeNAND闪存中的应用
机译:读取mLC NaND闪存中的干扰错误:表征,缓解和恢复