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机译:高性能SONOS闪存,具有嵌入在氮化硅电荷捕获层中的原位硅纳米晶体
Dept. of Electronics Engineering, Chungnam National University;
Dept. of Electronics Engineering, Chungnam National University;
Dept. of Electronics Engineering, Chungnam National University;
Dept. of Electronics Engineering, Chungnam National University;
Dept. of Electronics Engineering, Chungnam National University;
SK Hynix Inc.;
SK Hynix Inc.;
SK Hynix Inc.;
Electronics and Telecommunications Research Institute;
Dept. of Electronics Engineering, Chungnam National University;
Dept. of Electronics Engineering, Chungnam National University;
Silicon nanocrystal (Si-NC); SONOS; Trap engineering; Memory window; Retention; Multi-level cell (MLC);
机译:具有硅纳米晶体作为非易失性存储器件电荷捕获层的氮化硅的存储特性
机译:具有高k NdTiO_3电荷捕获层的氧化硅-氮化硅-氧化物-硅型闪存
机译:使用Y2O3膜作为电荷俘获层的聚氧化氮氮化硅氧化物型闪存
机译:氮化硅层中嵌入硅纳米晶体的电荷陷阱存储器的仿真
机译:基于物理的硅纳米晶非易失性闪存单元充电动力学建模
机译:SONOS闪存中氮化物内电荷迁移抑制的研究
机译:具有原位嵌入硅纳米晶体的sONOs型闪存的特性