New shallow donor centres in high-purity Czochralski-grown silicon single crystals

摘要

Two new shallow donor centres NSD(i) and NSD(ii) with binding energies of 38.32 meV and 40.09 meV, respectively, were observed in n-type high-purity Czochralski-grown silicon single crystals by means of high-resolution photothermal ionization spectroscopy. Their spectral features and the temperature dependence of the intensity of their spectral lines imply that they are two new independent hydrogenic shallow donors. Low magnetic field investigations were performed to support our statement. The existence of the new donor centres seems to be related to the micro-defects in the sample.