'One Transistor, Two Transistors, Three'

Holloway P.

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'One Transistor, Two Transistors, Three'

机译：“一个晶体管，两个晶体管，三个”

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There are 24 hours in a day; and, then there?s the night!? This, I had just learned, was always going to be the answer to the question, ?How can we possibly finish this project by then??

机译：一天有24小时；然后，有一个夜晚！？我刚刚了解到，这将永远是这个问题的答案，“到那时我们如何才能完成这个项目？”

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来源
《Solid-State Circuits Magazine, IEEE》 |2013年第3期|21-28|共8页
作者
Holloway P.;
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Analog Devices Inc.|c|;

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1. The authors' replies to the discussions on ????????A versatile transistor circuit????????, ????????The measurement of the small-signal characteristics of transistors????????, ????????A bridge for measuring the a.c. parameters of point-contact transistors???????? and ????????The transistor regenerative amplifier as a computer element???????? [J] . Cooke-Yarborough E.H., Florida C.D., Stephen J.H., Proceedings of the IEE - Part III: Radio and Communication Engineering . 1954,第73期

机译：作者对有关“通用晶体管电路”，“晶体管小信号特性的测量”的讨论的答复。 ??????，????????用于测量交流电的电桥点接触晶体管的参数以及晶体管再生放大器作为计算机元件。
2. Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high-voltage transistors via measurements and technology computer-aided design simulations of transfer characteristics of metal–insulator–semiconductor field-effect transistors and high-electron-mobility transistors [J] . Longobardi Giorgia, Udrea Florin, Sque Stephen, Power Electronics, IET . 2015,第12期

机译：通过测量和技术-计算机辅助设计仿真研究金属-绝缘体-半导体场效应晶体管和高电子迁移率晶体管的氮化镓/氮化镓铝/氮化镓高压晶体管中的表面电荷和陷阱
3. Advances in organic transistor-based biosensors: From organic electrochemical transistors to electrolyte-gated organic field-effect transistors [J] . Kergoat L., Piro B., Berggren M., Analytical and bioanalytical chemistry . 2012,第5期

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4. Design of a low power 4×4 multiplier based on five transistor (5-T) half adder, eight transistor (8-T) full adder two transistor (2-T) AND gate [C] . Mukherjee Biswarup, Roy Biplab, Biswas Arindam, 2015 Third International Conference on Computer, Communication, Control and Information Technology . 2015

机译：基于五个晶体管（5-T）半加法器，八个晶体管（8-T）全加法器和两个晶体管（2-T）与门的低功耗4×4乘法器的设计
5. Charge Trap Transistors (CTT): Turning Logic Transistors into Embedded Non-Volatile Memory for Advanced High-k/Metal Gate CMOS Technologies [D] . Khan, Faraz. 2020

机译：电荷陷阱晶体管（CTT）：将逻辑晶体管转换为高级高k /金属门CMOS技术的嵌入式非易失性存储器
6. :Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019) [O] . Changdong Chen, Bo‐Ru Yang, Gongtan Li, 2019

机译：：氢掺杂氧化物晶体管：氧化物场效应晶体管的超高表观迁移率分析（Adv。Sci。7/2019）
7. Propriétés électriques et modélisation des dispositifs MOS avanvés : dispositif FD-SOI, transistors sans jonctions (JLT) et transistor à couche mince à semi-conducteur d'oxyde amorphe. Electrical properties and modeling of advanced MOS devices : FD-SOI device, Junctionless Transistor, and Amorphous-Oxide-Semiconductor Thin Film Transistor [O] . Park So Jeong 2013

机译：支持和解释mOsavanvés：dispositif FD-sOI，transistor sans jonctions（JLT）ettransistoràcoucheminceàlele-conducteur d'oxyde amorphe。高级mOs器件的电气特性和建模：FD-sOI器件，无结晶体管和非晶氧化物半导体薄膜晶体管
8. Numerical Simulation of the Comparative Electrical Performance of the PermeableBase Transistor, Opposed Gate-Source Transistor and Heterostructure Launched Ballistic Field Effect Transistor [R] . Grubin, H. L., Kreskovsky, J. P., Meyyappan, M., 1990

机译：透水基三极管，对置栅 - 源晶体管和异质结构发射弹道场效应晶体管比较电性能的数值模拟

'One Transistor, Two Transistors, Three'

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